- Continue reading →
Low Pressure Chemical Vapour Deposition Furnace for Low Temperature Silicon Dioxide
Centrotherm
Usage
- Modus Operandi:
Service-Mode - Contamination category:
A - Sample-size:
up to 25 wafers per run; 9 samples (max. 2x2 cm)
FOM-Name and Location
- FOM-Name:
- AMO - LPCVD-LTO - Location:
AMO
Resources
- Tool manager:
AMO - Instruction video:
Not available - Tool description:
LTO (low temp. SiO2); 425°C; SiH4 and O2 process; up to 500 nm
- Modus Operandi:
- Continue reading →
Low Pressure Chemical Vapour Deposition Furnace for Polycrystalline Silicon
Centrotherm
Usage
- Modus Operandi:
Service-Mode - Contamination category:
A - Sample-size:
up to 25 wafers per run; 15x15 cm tray for samples
FOM-Name and Location
- FOM-Name:
- AMO - LPCVD-Poly - Location:
AMO
Resources
- Tool manager:
AMO - Instruction video:
Not available - Tool description:
Polysilicon; 620°C; SiH4 process; up to 500 nm
- Modus Operandi:
- Continue reading →
Plasma-Enhanced Chemical Vapor Deposition System
Oxford Instruments, PlasmaLab 80 Plus
Usage
- Modus Operandi:
... - Contamination category: C
- Sample-size:
Pieces ... 4″
FOM-Name and Location
- FOM-Name:
PECVD (Petzi) - Location:
CMNT, Room 004
Resources
- Tool manager:
Jan Gruis - Instruction video:
Open video - Tool description:
Oxford Instruments, PlasmaLab 80 Plus
Parallel-plate PECVD
Process gases: SiH4, O2, NH3
- Modus Operandi:
- Continue reading →
Cluster Tool for Atomic Layer Deposition and Inductively Coupled Plasma Chemical Vapor Deposition
Oxford Instruments, PlasmalabSystem 100
Usage
- Modus Operandi:
User-mode - Contamination category: B
- Sample-size:
Pieces ... 6″ wafers,
8" wafer possible with small modifications
FOM-Name and Location
- FOM-Name:
– IHT – Cluster-Tool (ALD and ICP-CVD) - Location:
WSH, Room 24B101
Resources
- Tool manager:
Birger Berghoff - Instruction video:
Open video - Tool description:
Oxford Instruments, PlasmalabSystem 100
- Modus Operandi:
Back to overview of tools.