Low Pressure Chemical Vapour Deposition Furnace for Low Temperature Silicon Dioxide
Centrotherm
Usage
- Modus Operandi:
Service-Mode - Contamination category:
A - Sample-size:
up to 25 wafers per run; 9 samples (max. 2x2 cm)
FOM-Name and Location
- FOM-Name:
- AMO - LPCVD-LTO - Location:
AMO
Resources
- Tool manager:
AMO - Instruction video:
Not available - Tool description:
LTO (low temp. SiO2); 425°C; SiH4 and O2 process; up to 500 nm